The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8217708 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 10, 2012

Filed:

Nov. 10, 2009
Applicant:

Kiyoshi Yoshikawa, Chiba, JP;

Inventor:

Kiyoshi Yoshikawa, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 3/011 (2006.01); G01K 7/34 (2006.01); G01K 7/01 (2006.01);
U.S. Cl.
CPC ...
Abstract

A temperature sensor performs more precise temperature measurement, even when manufacturing fluctuations are present in semiconductor elements forming a circuit for generating a temperature-dependent current. The temperature sensor includes: a temperature-dependent voltage generation circuit for generating a temperature-dependent potential that is dependent on temperature; a current generation circuit for allowing a temperature-dependent current to flow based on the temperature-dependent potential; a reference current generation circuit for generating a reference current that is independent of temperature; a capacitor that is charged alternately with the temperature-dependent current during a first charge period and the reference current during a second charge period; a pulse generation circuit for comparing a charged voltage of the capacitor with a reference voltage to generate a pulse; and a control circuit for alternately supplying the temperature-dependent current and the reference current to the capacitor. The temperature-dependent voltage generation circuit includes switches for switching connection relations between MOS transistors forming a current source circuit included in the temperature-dependent voltage generation circuit and bipolar transistors each serving as a load of the current source circuit.


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Yoshikawa, Kiyoshi. (2012). Temperature sensor (U.S. Patent No. 8217708). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8217708

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