The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Mar. 29, 2011
Sangwook Kim, Yongin-si, KR;
Ihun Song, Seongnam-si, KR;
Changjung Kim, Yongin-si, KR;
Jaechul Park, Seoul, KR;
Sunil Kim, Yongin-si, KR;
Sangwook Kim, Yongin-si, KR;
Ihun Song, Seongnam-si, KR;
Changjung Kim, Yongin-si, KR;
Jaechul Park, Seoul, KR;
Sunil Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of operating inverter may include providing a load transistor and a driving transistor connected to the load transistor wherein at least one of the load transistor and the driving transistor has a double gate structure, and varying a threshold voltage of the at least one of the load transistor and the driving transistor having the double gate structure. A threshold voltage of the load transistor or the driving transistor may be adjusted by the double gate structure, and accordingly, the inverter may be an enhancement/depletion (E/D) mode inverter.