The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8217488 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 10, 2012

Filed:

Jul. 19, 2010
Applicants:

Shiue-lung Chen, Taoyuan, TW;

Jeng-guo Feng, Taoyuan, TW;

Jang-ho Chen, Taoyuan, TW;

Ching-hwa Chang Jean, Taoyuan, TW;

Inventors:

Shiue-Lung Chen, Taoyuan, TW;

Jeng-Guo Feng, Taoyuan, TW;

Jang-Ho Chen, Taoyuan, TW;

Ching-Hwa Chang Jean, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for enhancing light extraction efficiency of GaN light emitting diodes is disclosed. By cutting off a portion from each end of bottom of a sapphire substrate or forming depressions on the bottom of the substrate and forming a reflector, light beams emitted to side walls of the substrate can be guided to the light emitting diodes.


Find Patent Forward Citations

Chen, Shiue-Lung. (2012). Gan light emitting diode and method for increasing light extraction on gan light emitting diode via sapphire shaping (U.S. Patent No. 8217488). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8217488

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