The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2012

Filed:

Feb. 11, 2011
Applicant:

Wei-chieh Lin, Hsinchu, TW;

Inventor:

Wei-Chieh Lin, Hsinchu, TW;

Assignee:

Sinopower Semiconductor Inc., Hsinchu Science Park, Hsinchu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes an epitaxial layer having a first conductive type, and at least one first semiconductor layer and a second semiconductor layer having a second conductive type. The first semiconductor layer is disposed in the epitaxial layer of a peripheral region, and has an arc portion, and a first strip portion and a second strip portion extended from two ends of the arc portion. The first strip portion points to an active device region, and the second strip portion is perpendicular to the first strip portion The second semiconductor layer is disposed in the epitaxial layer of the peripheral region between the active device region and the second strip portion, and the second semiconductor has a sidewall facing and parallel to the first semiconductor layer.


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