The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Feb. 03, 2004
Applicants:
Bin Yu, Cupertino, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Haihong Wang, Milpitas, CA (US);
Inventors:
Assignee:
Globalfoundries, Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
A double-gate semiconductor device includes a substrate, an insulating layer, a fin and two gates. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. A first gate is formed on the insulating layer and is adjacent a first sidewall of the fin. The second gate is formed on the insulating layer and is adjacent a second sidewall of the fin opposite the first sidewall. The first and second gates both include a conductive material and are electrically separated by the fin.