The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2012

Filed:

Jun. 10, 2004
Applicants:

Sang-hun Jeon, Yongin-si, KR;

Soo-doo Chae, Seongnam-si, KR;

Ju-hyung Kim, Yongin-si, KR;

Chung-woo Kim, Seongnam-si, KR;

Inventors:

Sang-hun Jeon, Yongin-si, KR;

Soo-doo Chae, Seongnam-si, KR;

Ju-hyung Kim, Yongin-si, KR;

Chung-woo Kim, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

A SONOS memory device, and a method of manufacturing the same, includes a substrate and a multifunctional device formed on the substrate. The multifunctional device performs both switching and data storing functions. The multifunctional device includes first and second impurities areas, a channel formed between the first and second impurities areas, and a stacked material formed on the channel for data storage. The stacked material for data storage is formed by sequentially stacking a tunneling oxide layer, a memory node layer in which data is stored, a blocking layer, and an electrode layer.


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