The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Jan. 19, 2010
Kyouji Yamashita, Kyoto, JP;
Kyouji Yamashita, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor device includes a first well region; a second well region; a first active regionsurrounded by an isolation region; a second active regionsurrounded by the isolation regionsandB; a first MIS transistor MPof a second conductivity type formed on the first active region; and including a source/drain region formed of a Si mixed crystal layer buried in a recess; a second MIS transistor MNof a first conductivity type formed on the second active region; and an isolation MIS transistor DPof the second conductivity type formed on the first active region. The source/drain region of the first MIS transistor is not in contact with the isolation regionlocated at an end of the first active regionin a gate length direction.