The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2012

Filed:

Mar. 25, 2010
Applicant:

Puneet Kohli, Dallas, TX (US);

Inventor:

Puneet Kohli, Dallas, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

Complementary MOS (CMOS) integrated circuits include MOS transistors, resistors and bipolar transistors formed on a common substrate. An emitter region of a bipolar transistor is implanted with a first dopant in an implantation process that implants source/drain regions of an MOS transistor, and is also implanted with a second dopant of same conductivity type in another implantation process that implants a body region of a resistor. The first and second dopants may optionally be the same dopant. The source/drain regions are implanted with the resistor body region covered by a first patterned mask; and the resistor body region is implanted with the MOS transistor source/drain regions covered by a second patterned mask. The implantations of the MOS transistor source/drain regions and of the resistor body region the source/drain regions can occur in any order, with the emitter region implanted during both implantations.


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