The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Jun. 13, 2008
Masaru Takaishi, Kyoto, JP;
Masaru Takaishi, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
Provided is a semiconductor device in which on-resistance is largely reduced. In a region () of an N type epitaxial layer () of the semiconductor device, each region between neighboring trenches () is blocked with a depletion layer () formed around a trench () so that a current passage () is interrupted, while a part of the depletion layer () formed around the trench () is deleted so that the current passage () is opened. In a region (), a junction portion () between the N type epitaxial layer () and a Ptype diffusion region () makes a Zener diode ().
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile