The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Feb. 14, 2011
Shaoher X. Pan, San Jose, CA (US);
Jay Chen, Saratoga, CA (US);
Justin Payne, San Jose, CA (US);
Michael Heuken, Aachen, DE;
Shaoher X. Pan, San Jose, CA (US);
Jay Chen, Saratoga, CA (US);
Justin Payne, San Jose, CA (US);
Michael Heuken, Aachen, DE;
SiPhoton Inc., San Jose, CA (US);
Abstract
A light emitting device includes a silicon substrate comprising a (111) surface and a GaN crystal structure over the (111) surface of the silicon substrate. The GaN crystal structure includes a first surface along a semi-polar plane of the GaN crystal structure and a second surface along a polar plane of the GaN crystal structure. The light emitting device also includes light emission layers over the first surface of the GaN crystal structure. The light emission layers include at least one quantum well comprising GaN.