The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8217399 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 10, 2012

Filed:

Jul. 29, 2009
Applicants:

Dung T. Duong, Cedar Park, TX (US);

William Gregory Flynn, Austin, TX (US);

Inventors:

Dung T. Duong, Cedar Park, TX (US);

William Gregory Flynn, Austin, TX (US);

Assignee:

Illumitex, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
Abstract

Embodiments described herein include LEDs that promote photon tunneling. One embodiment of an LED device can have a quantum well layer adapted to generate light having a wavelength, a p-doped alloy layer on a first side of the quantum well layer and an n-doped alloy layer on the other side of the quantum well layer. The device can also include an electrode electrically connected to the p-doped alloy layer and an electrode electrically connected to the n-doped alloy layer. According to one embodiment the thickness of the n-doped alloy layer is less than the wavelength of light generated by the quantum well layer to allow light generated by the quantum well layer to tunnel to the medium (e.g., air). In another embodiment, the entire layer structure can have a thickness that is less than the wavelength.


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Duong, Dung. (2012). Photon tunneling light emitting diodes and methods (U.S. Patent No. 8217399). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8217399

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