The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Oct. 15, 2008
Victor Lienkong Lou, Schenectady, NY (US);
Kevin Sean Matocha, Rexford, NY (US);
Gregory Thomas Dunne, Rexford, NY (US);
Victor Lienkong Lou, Schenectady, NY (US);
Kevin Sean Matocha, Rexford, NY (US);
Gregory Thomas Dunne, Rexford, NY (US);
General Electric Company, Niskayuna, NY (US);
Abstract
Methods are provided for improving inversion layer mobility and providing low defect density in a semiconductor device based upon a silicon carbide (SiC) substrate. More specifically, embodiments of the present method provide for the formation of a gate oxide on a silicon carbide substrate comprising oxidizing the substrate with a gaseous mixture comprising oxygen at a temperature of at least about 1300° C. Semiconductor devices, such as MOSFETS, based upon a substrate treated according to the present method are expected to have inversion layer mobilities of at least about 12 cm/Vs.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile