The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Jan. 15, 2009
Mototaka Ochi, Kobe, JP;
Nobuyuki Kawakami, Kobe, JP;
Katsufumi Tomihisa, Kobe, JP;
Hiroshi Goto, Kobe, JP;
Mototaka Ochi, Kobe, JP;
Nobuyuki Kawakami, Kobe, JP;
Katsufumi Tomihisa, Kobe, JP;
Hiroshi Goto, Kobe, JP;
Kobe Steel, Ltd., Kobe-shi, JP;
Abstract
The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer, a source electrode, a drain electrode, and a transparent conductive film, in which the source electrodeand drain electrodeare formed by patterning by means of dry etching and comprises an Al alloy thin film comprising 0.1 to 1.5 atom % of Si and/or Ge, 0.1 to 3.0 atom % of Ni and/or Co, and 0.1 to 0.5 atom % of La and/or Nd, and the thin film transistor is directly connected with the semiconductor layer