The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Jun. 29, 2007
Andrew Gabriel Rinzler, Newberry, FL (US);
Zhuangchun Wu, Gainesville, FL (US);
BO Liu, Gainesville, FL (US);
Andrew Gabriel Rinzler, Newberry, FL (US);
Zhuangchun Wu, Gainesville, FL (US);
Bo Liu, Gainesville, FL (US);
University of Florida Research Foundation, Inc., Gainesville, FL (US);
Abstract
A vertical field effect transistor (FET) comprises a gate electrode and a first electrode layer having a dielectric layer interposed between these electrodes and a semiconducting active layer electrically coupled to the first electrode. The active layer and the dielectric layer sandwich at least a portion of the first electrode where at least one portion of the active layer is unshielded by the first electrode such that the unshielded portion is in direct physical contact with the dielectric layer. A second electrode layer is electrically coupled to the active layer where the second electrode is disposed on at least a portion of the unshielded portion of the active layer such that the second electrode can form electrostatic fields with the gate electrode upon biasing in unscreened regions near the first electrode.