The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2012

Filed:

Mar. 02, 2010
Applicants:

Yong-hyun Kwon, Gyeonggi-do, KR;

Jun Seo, Asan-si, KR;

Jae-seung Hwang, Suwon-si, KR;

Ji-young Lee, Yongin-si, KR;

Inventors:

Yong-Hyun Kwon, Gyeonggi-do, KR;

Jun Seo, Asan-si, KR;

Jae-Seung Hwang, Suwon-si, KR;

Ji-Young Lee, Yongin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of forming patterns in semiconductor devices are provided including forming first patterns spaced apart from one another on an object structure. A first sacrificial layer is formed conformally on the first patterns and the object structure. A second pattern is formed on a sidewall of the first sacrificial layer, the second pattern having a height smaller than that of the first pattern from an upper surface of the object structure. The first patterns are selectively removed to form an opening that exposes the object structure. A third pattern is formed on a sidewall of the opening.


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Kwon, Yong-Hyun. (2012). Methods of forming patterns in semiconductor devices (U.S. Patent No. 8216944). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8216944

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