The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Dec. 30, 2010
Ki Lyoung Lee, Hwaseong, KR;
Jin Soo Kim, Icheon, KR;
Ki Lyoung Lee, Hwaseong, KR;
Jin Soo Kim, Icheon, KR;
Hynix Semiconductor Inc., Icheon, KR;
Abstract
A method for forming a semiconductor device includes forming a partition line pattern and a partition pad pattern connected to an end part of the partition line pattern over the semiconductor substrate. Spacer insulation layers are formed at sidewalls of the partition line pattern and the partition pad pattern. A gap-filling layer is formed between the spacer insulation layers. A first cutting mask pattern is formed to expose a connecting part between the partition line pattern and the partition pad pattern. The partition line pattern and the gap-filling layer adjacent to the spacer insulation layer are removed using the first cutting mask pattern as a mask. A second cutting mask pattern including a first pattern and a second pattern are formed. The spacer insulation layer is removed using the second cutting mask pattern as a mask to form a gate trench in the substrate.