The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Dec. 22, 2010
Eiji Yoshida, Kawasaki, JP;
Takao Ohno, Kawasaki, JP;
Yoshito Akutagawa, Kawasaki, JP;
Koji Sawahata, Kawasaki, JP;
Masataka Mizukoshi, Kawasaki, JP;
Takao Nishimura, Kawasaki, JP;
Akira Takashima, Kawasaki, JP;
Mitsuhisa Watanabe, Aizuwakamatsu, JP;
Eiji Yoshida, Kawasaki, JP;
Takao Ohno, Kawasaki, JP;
Yoshito Akutagawa, Kawasaki, JP;
Koji Sawahata, Kawasaki, JP;
Masataka Mizukoshi, Kawasaki, JP;
Takao Nishimura, Kawasaki, JP;
Akira Takashima, Kawasaki, JP;
Mitsuhisa Watanabe, Aizuwakamatsu, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.