The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Jun. 04, 2009
Applicants:
Mary Chen, Oak Park, CA (US);
Marko Sokolich, Los Angeles, CA (US);
Inventors:
Mary Chen, Oak Park, CA (US);
Marko Sokolich, Los Angeles, CA (US);
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/8222 (2006.01);
U.S. Cl.
CPC ...
Abstract
A wafer comprising at least one high FHBT and at least one high BVceo HBT having various collector profiles on a common III-V compound semiconductor based wafer. The N+ implant in the collector varies the collector profiles of individual HBTs on the wafer. The method for preparing the device comprises forming of HBT layers up to and including collector layer on non-silicon based substrate, performing ion implantation, annealing for implant activation, and forming remaining HBT layers.