The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Feb. 18, 2009
Wen-chun Chen, Taipei, TW;
Kuo-tung Lin, Taipei, TW;
Yuh-zheng Lee, Hsinchu, TW;
Chao-feng Sung, Miaoli County, TW;
Wen-Chun Chen, Taipei, TW;
Kuo-Tung Lin, Taipei, TW;
Yuh-Zheng Lee, Hsinchu, TW;
Chao-Feng Sung, Miaoli County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
Fabrication methods for electronic devices with via through holes and thin film transistor devices are presented. The fabrication method the electronic device includes providing a substrate, forming a patterned lower electrode on the substrate, and forming a photosensitive insulating layer on the substrate covering the patterned lower electrode. A patterned optical shielding layer is applied on the photosensitive insulating layer. Exposure procedure is performed curing the exposed photosensitive insulating layer. The optical shielding layer and the underlying photosensitive insulating layer are sequentially removed, thereby forming an opening. A patterned upper electrode is formed on the photosensitive insulating layer filling the opening to create a conductive via hole.