The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2012

Filed:

Oct. 13, 2010
Applicants:

Katsumi Uesaka, Yokohama, JP;

Kuniaki Ishihara, Yokohama, JP;

Yutaka Oonishi, Yokohama, JP;

Inventors:

Katsumi Uesaka, Yokohama, JP;

Kuniaki Ishihara, Yokohama, JP;

Yutaka Oonishi, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method to manufacture an optical device with enhanced high frequency performance is disclosed. The method includes steps of: (a) forming semiconductor layers on a semiconductor substrate, (b) etching the semiconductor layers by using a mask to form a plurality of diffraction gratings, where the mask provides a plurality of periodic patterns each corresponding to respective gratings and having a specific pitch different from others, (c) forming an active layer on the etched semiconductor layers, (d) measuring a maximum optical gain of the active layer, (e) selecting one of diffraction gratings based on the measured optical gain, and (f) forming a current confinement structure aligned with the selected diffraction grating.


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