The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Dec. 03, 2007
Jin-ho Yang, Kyoungki-do, KR;
Sang-do Lee, Kyoungki-do, KR;
Jin-Ho Yang, Kyoungki-do, KR;
Sang-Do Lee, Kyoungki-do, KR;
Hynix Semiconductor Inc., , KR;
Abstract
A method for fabricating a capacitor includes forming a first storage node (SN) oxide layer over a substrate, forming a second SN oxide layer over the first SN oxide layer, forming a mask pattern over the second SN oxide layer, dry-etching the first and the second SN oxide layers using the mask pattern as an etch barrier to form a capacitor region, and wet-etching a resultant structure including the capacitor region to enlarge a bottom width of the capacitor region, thereby forming a final capacitor region having the enlarged bottom width, wherein the first SN oxide layer comprises one portion of high impurity concentration and the other portion of low impurity concentration, the one portion corresponding to a region where the final capacitor region is to be formed.