The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2012
Filed:
Apr. 27, 2010
Mitsuhiko Ogihara, Gunma, JP;
Masaaki Sakuta, Tokyo, JP;
Mitsuhiko Ogihara, Gunma, JP;
Masaaki Sakuta, Tokyo, JP;
Oki Data Corporation, Tokyo, JP;
Abstract
A cubic silicon carbide single crystal thin film is manufactured by a method. A sacrificial layer is formed on a surface of a substrate. A cubic semiconductor layer is formed on the sacrificial layer, the cubic semiconductor layer having at least a surface of cubic crystal structure. A cubic silicon carbide single crystal layer is formed on the cubic semiconductor layer. The sacrificial layer is etched away to release a multilayer structure of the cubic semiconductor layer and the 3C—SiC layer from the substrate. A cubic silicon carbide single crystal thin film of a multilayer structure includes an AlGaAs (0.6>x≧0) layer and a cubic silicon carbide single crystal layer. A metal layer is formed on a substrate. The multilayer structure is bonded to the metal layer with the AlGaAs (0.6>x≧0) in direct contact with the metal layer.