The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Feb. 12, 2010
Ryuji Kobayashi, Kawasaki, JP;
Ryuji Kobayashi, Kawasaki, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
Provided is a semiconductor laser including: a substrate (semiconductor substrate); an optical waveguide (active layer waveguide) with a mesa structure that includes an active layer (strain-compensated multiple quantum well active layer) including Al, is provided over the semiconductor substrate; a semiconductor protective layer that is provided so as to cover the top and the side of a mesa of the active layer waveguide; a current block layer that is provided so as to embed the active layer waveguide and the semiconductor protective layer; and a clad layer (p-type InP clad layer) that is provided over the semiconductor protective layer and the current block layer, wherein, the semiconductor protective layer has a semiconductor layer (p-type InGaAsP protective layer) that includes As, but does not include Al.