The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Aug. 28, 2009
Ashraf W. Lotfi, Bridgewater, NJ (US);
William W. Troutman, Montville, NJ (US);
Douglas Dean Lopata, Boyertown, PA (US);
Tanya Nigam, Sunnyvale, CA (US);
Ashraf W. Lotfi, Bridgewater, NJ (US);
William W. Troutman, Montville, NJ (US);
Douglas Dean Lopata, Boyertown, PA (US);
Tanya Nigam, Sunnyvale, CA (US);
Enpirion, Inc., Hampton, NJ (US);
Abstract
An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.