The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8212308 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 03, 2012

Filed:

Nov. 13, 2009
Applicants:

Kiyohito Nishihara, Yokohama, JP;

Fumitaka Arai, Yokohama, JP;

Inventors:

Kiyohito Nishihara, Yokohama, JP;

Fumitaka Arai, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

Two diffusion layers are provided in an element area. A tunnel insulating film is provided on the surface of the element area between the two diffusion layers. A charge storage layer is provided on the tunnel insulating film. A first insulator provided on the upper surface of the charge storage layer. An inter-electrode insulating film provided on the first insulator, on the side surface of the charge storage layer in a first direction and on the isolation insulating film. And a control gate electrode extends in the first direction and covers the charge storage layer via the first insulator and the inter-electrode insulating film. The first insulator is thicker than the inter-electrode insulating film, and the inter-electrode insulating film has a first slit on the first insulator.


Find Patent Forward Citations

Nishihara, Kiyohito. (2012). Nonvolatile semiconductor flash memory (U.S. Patent No. 8212308). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8212308

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