The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
May. 24, 2011
Mitsuaki Osame, Atsugi, JP;
Hiroyuki Miyake, Atsugi, JP;
Aya Miyazaki, Yokohama, JP;
Shunpei Yamazaki, Setagaya, JP;
Mitsuaki Osame, Atsugi, JP;
Hiroyuki Miyake, Atsugi, JP;
Aya Miyazaki, Yokohama, JP;
Shunpei Yamazaki, Setagaya, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
To provide a method of releasing charges which have been injected into charge accumulating layers of nonvolatile memory elements without using a substrate terminal such as a p well or an n well, as a method for deleting data from a NAND-type nonvolatile memory. In the method for deleting data from the NAND-type nonvolatile memory, charges stored in a charge accumulating layer of a first nonvolatile memory element are released by applying a first potential to a bit line and a source line, a second potential to a control gate of the first nonvolatile memory element, and a third potential which is different from the second potential to a control gate of a second nonvolatile memory element.