The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Mar. 11, 2009
Tushar K. Thrivikraman, Decatur, GA (US);
Aravind Appaswamy, Atlanta, GA (US);
John D. Cressler, Smyrna, GA (US);
Tushar K. Thrivikraman, Decatur, GA (US);
Aravind Appaswamy, Atlanta, GA (US);
John D. Cressler, Smyrna, GA (US);
Georgia Tech Research Corporation, Atlanta, GA (US);
Abstract
Disclosed is a device structure using an inverse-mode cascoded Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) beneficial in applications requiring radiation hardened circuitry. The device comprises a forward-mode common-emitter HBT cascoded with a common-base inverse-mode HBT, sharing a common sub-collector. An exemplary device was measured to have over 20 dB of current gain, and over 30 dB of power gain at 10 GHz, thus demonstrating the use of these circuits for high-frequency circuit applications. In addition, the radiation response and voltage limits were characterized and showed to have negligible performance effects in typical operating conditions. Due to the unique topology, the disclosed device has the benefit of being a more compact cascode design and the additional benefit of providing significantly improved radiation tolerance.