The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2012

Filed:

Dec. 25, 2008
Applicant:

Emiko Fujii, Tokyo, JP;

Inventor:

Emiko Fujii, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/07 (2012.01); H01L 27/148 (2006.01); H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract

The semiconductor light receiving elementincludes a semiconductor substrate, and a semiconductor layer having a photo-absorption layerdisposed on the top of the semiconductor substrate. The semiconductor layer of the semiconductor light receiving elementcontaining at least the photo-absorption layerhas a mesa structure, and a side wall of the mesa is provided with a protective filmcovering the side wall. The protective filmis a silicon nitride film containing hydrogen, and a hydrogen concentration in one surface of the protective filmlocated at the side of the mesa side wall is lower than a hydrogen concentration in the other surface of the protective filmlocated at the side that is opposite to the side of the mesa side wall.


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