The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2012

Filed:

Sep. 28, 2007
Applicants:

Masahiro Orita, Akishima, JP;

Takashi Narushima, Akishima, JP;

Hiroaki Yanagida, Hino, JP;

Inventors:

Masahiro Orita, Akishima, JP;

Takashi Narushima, Akishima, JP;

Hiroaki Yanagida, Hino, JP;

Assignee:

Hoya Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
Abstract

To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material, 1×10to 5×10cmof Ag is contained in a compound containing Zn and Se, and the semiconductor device includes a substrate and a p-type electrode layer arranged on this substrate and having the aforementioned p-type semiconductor material.


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