The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Feb. 29, 2008
Yoshimizu Moriya, Osaka, JP;
Mutsumi Nakajima, Osaka, JP;
Yasuyoshi Kaise, Osaka, JP;
Makoto Kita, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Yoshiyuki Itoh, Osaka, JP;
Yoshimizu Moriya, Osaka, JP;
Mutsumi Nakajima, Osaka, JP;
Yasuyoshi Kaise, Osaka, JP;
Makoto Kita, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Yoshiyuki Itoh, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In an active-matrix substrate () according to the present invention, a semiconductor layer () has a first gettering region () adjacent to the source region () of a first thin-film transistor (), a second gettering region () adjacent to the drain region () of a second thin-film transistor (), and a third gettering region () adjacent to any of the source and drain regions located between the respective channel regions (and) of the first and second thin-film transistors (and) among the source and drain regions of the thin-film transistors included in the thin-film transistor element ().