The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2012

Filed:

Aug. 03, 2009
Applicants:

Ulrich Denker, Dresden, DE;

Tobias Canzler, Dresden, DE;

Qiang Huang, Dresden, DE;

Inventors:

Ulrich Denker, Dresden, DE;

Tobias Canzler, Dresden, DE;

Qiang Huang, Dresden, DE;

Assignee:

Novaled AG, Dresden, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.


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