The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Jul. 02, 2009
Lars Samuelson, Malmö, SE;
Claes Thelander, Lund, SE;
Jonas Ohlsson, Malmö, SE;
Anders Mikkelsen, Arlöv, SE;
Lars Samuelson, Malmö, SE;
Claes Thelander, Lund, SE;
Jonas Ohlsson, Malmö, SE;
Anders Mikkelsen, Arlöv, SE;
QuNano AB, Lund, SE;
Abstract
The present invention provides a nanostructured memory device comprising at least one semiconductor nanowire () forming a current transport channel, one or more shell layers () arranged around at least a portion of the nanowire (), and nano-sized charge trapping centers () embedded in said one or more shell layers (), and one or more gate electrodes () arranged around at least a respective portion of said one or more shell layers (). Preferably said one or more shell layers () are made of a wide band gap material or an insulator. The charge trapping centers () may be charged/written by using said one or more gate electrodes () and a change in an amount of charge stored in one or more of the charge trapping centers () alters the conductivity of the nanowire ().