The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
May. 19, 2008
Applicants:
James E. Hutchison, Eugene, OR (US);
Gregory J. Kearns, Foster City, CA (US);
Inventors:
James E. Hutchison, Eugene, OR (US);
Gregory J. Kearns, Foster City, CA (US);
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/20 (2006.01); B32B 3/10 (2006.01); C23F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Silicon grids with electron-transparent SiOwindows for use as substrates for high-resolution transmission electron microscopy of chemically-modified SiOsurfaces are fabricated by forming an oxide layer on a silicon substrate. An aperture is defined in the silicon substrate by etching the substrate to the oxide layer. A single substrate can include a plurality of apertures that are in respective frame regions that are defined by one or more channels in the substrate. Structural or chemical functionalizations can be provided, and surface interactions observed via TEM.