The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Jan. 10, 2011
Young Sam Park, Daejeon, KR;
Moon Gyu Jang, Daejeon, KR;
Younghoon Hyun, Seoul, KR;
Myungsim Jun, Daejeon, KR;
Sang Hoon Cheon, Daejeon, KR;
Taehyoung Zyung, Daejeon, KR;
Young Sam Park, Daejeon, KR;
Moon Gyu Jang, Daejeon, KR;
Younghoon Hyun, Seoul, KR;
Myungsim Jun, Daejeon, KR;
Sang Hoon Cheon, Daejeon, KR;
Taehyoung Zyung, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a thermoelectric device and a method of forming the same, a temperature sensing sensor, and a heat-source image sensor using the same. The thermoelectric device includes a first nanowire and a second nanowire, a first silicon thin film, a second silicon thin film, and a third silicon thin film. The first nanowire and a second nanowire are disposed on a substrate. The first nanowire and the second nanowire are separated from each other. The first silicon thin film is connected to one end of the first nanowire. The second silicon thin film is connected to one end of the second nanowire. The third silicon thin film is connected to the other ends of the first nanowire and the second nanowire. The first and second nanowires extend in a direction parallel to an upper surface of the substrate.