The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Oct. 20, 2006
Hitoshi Miyata, Niigata, JP;
Yoshimasa Fujigaki, Niigata, JP;
Yoji Yamaguchi, Gunma, JP;
Yoshinori Muto, Gunma, JP;
Masaaki Tamura, Gunma, JP;
Hitoshi Miyata, Niigata, JP;
Yoshimasa Fujigaki, Niigata, JP;
Yoji Yamaguchi, Gunma, JP;
Yoshinori Muto, Gunma, JP;
Masaaki Tamura, Gunma, JP;
Niigata University, Niigata, JP;
Japan Carlit Co., Ltd., Tokyo, JP;
Abstract
There is provided a high-sensitivity organic semiconductor radiation/light sensor and a radiation/light detector which can detect rays in real time. In the high-sensitivity organic semiconductor radiation/light sensor, a signal amplification wireis embedded in an organic semiconductor. Carriers created by passage of radiation or light are avalanche-amplified by a high electric field generated near the signal amplification wireby means of applying a high voltage to the signal amplification wire, thus dramatically improving detection efficiency of rays. Hence, even rays exhibiting low energy loss capability can be detected in real time with high sensitivity.