The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2012

Filed:

May. 25, 2007
Applicants:

Valli Arunachalam, Garland, TX (US);

Satyavolu Srinivas Papa Rao, Garland, TX (US);

Sanjeev Aggarwal, Scottsdale, AZ (US);

Stephan Grunow, Poughkeepsie, NY (US);

Inventors:

Valli Arunachalam, Garland, TX (US);

Satyavolu Srinivas Papa Rao, Garland, TX (US);

Sanjeev Aggarwal, Scottsdale, AZ (US);

Stephan Grunow, Poughkeepsie, NY (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

In accordance with the invention, there are diffusion barriers, integrated circuits, and semiconductor devices and methods of fabricating them. The method of fabricating a diffusion barrier can include providing a dielectric layer, forming a first silicon enriched layer over the dielectric layer by exposing the dielectric layer to a silicon-containing ambient, and forming a barrier layer over the first silicon enriched layer.


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