The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Jun. 14, 2006
Method for the removal of doped surface layers on the back faces of crystalline silicon solar wafers
Moritz Heintze, Ulm, DE;
Rainer Moeller, Dresden, DE;
Harald Wanka, Blaustein, DE;
Elena Lopez, Dresden, DE;
Volkmar Hopfe, Kleingiesshuebel, DE;
Ines Dani, Lichtenau, DE;
Milan Rosina, Genoble, FR;
Moritz Heintze, Ulm, DE;
Rainer Moeller, Dresden, DE;
Harald Wanka, Blaustein, DE;
Elena Lopez, Dresden, DE;
Volkmar Hopfe, Kleingiesshuebel, DE;
Ines Dani, Lichtenau, DE;
Milan Rosina, Genoble, FR;
Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung E.V., Munich, DE;
Centrotherm Photovoltaics AG, Blaubeuren, DE;
Abstract
The invention relates to a method for the one-sided removal of a doped surface layer on rear sides of crystalline silicon solar wafers. In accordance with the object set, doped surface layers should be able to be removed from rear sides of such solar wafers in a cost-effective manner and with a handling which is gentle on the substrate. In addition, the front side should not be modified. In accordance with the invention, an etching gas is directed onto the rear side surface of silicon solar wafers with a plasma atmospheric pressure.