The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2012
Filed:
Apr. 30, 2008
Dong-gun Park, Seongnam-si, KR;
Dong-won Kim, Seongnam-si, KR;
Sung-young Lee, Yongin-si, KR;
Yang-kyu Choi, Yongin-si, KR;
Chang-hoon Kim, Yongin-si, KR;
Ju-hyun Kim, Yongin-si, KR;
Dong-Gun Park, Seongnam-si, KR;
Dong-Won Kim, Seongnam-si, KR;
Sung-Young Lee, Yongin-si, KR;
Yang-Kyu Choi, Yongin-si, KR;
Chang-Hoon Kim, Yongin-si, KR;
Ju-Hyun Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of patterning a metal layer includes forming a first mask on a surface of the metal layer, the first mask having an opening through the first mask that exposes the metal layer, and forming a nanogap in the exposed metal layer using an ion beam directed through the opening. The first mask limits a lateral extent of the ion beam, and the nanogap has a width that is less than a width of the opening.