The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Mar. 31, 2011
Kyouhei Watanabe, Machida, JP;
Masaki Kurihara, Koza-gun, JP;
Hitoshi Shindo, Hadano, JP;
Nobuhiko Sato, Yokohama, JP;
Yasuhiro Sekine, Yokohama, JP;
Masataka Ito, Chigasaki, JP;
Kyouhei Watanabe, Machida, JP;
Masaki Kurihara, Koza-gun, JP;
Hitoshi Shindo, Hadano, JP;
Nobuhiko Sato, Yokohama, JP;
Yasuhiro Sekine, Yokohama, JP;
Masataka Ito, Chigasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of fabricating a photomask used to form a lens. The method includes the steps of generating mask pattern data for each of a plurality of grid cells constituting a mask pattern for the lens, and fabricating the photomask based on the mask pattern data. The step of generating the mask pattern data includes acquiring data which represents a transmitted light distribution required for the photomask to fabricate the lens, in which the transmitted light distribution includes a quantity of transmitted light in each of the plurality of grid cells, and determining whether to place a shield on each of the plurality of grid cells by binarizing the quantity of transmitted light in each of the plurality of grid cells in order of increasing or decreasing distance from a center of the mask pattern using an error diffusion method.