The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Jan. 08, 2009
Boaz Eitan, Hofit, IL;
Maria Kushnir, Nesher, IL;
Assaf Shappir, Kiryat Ono, IL;
Spansion Israel Ltd, Netanya, IL;
Abstract
In a nonvolatile memory (NVM) cell, an injector having one or more layers of material with a lower potential barrier for holes is disposed between a charge storage stack and a source of holes (the gate for top injection, the substrate for bottom injection), to facilitate hole tunneling from the source of holes into the charge-storage layer of the charge storage stack. The injector has a barrier potential for holes which is less than an insulating layer of the charge-storage stack which is oriented towards the source of holes. A multi-layer crested barrier injector may have layers of increasing potential barriers for holes from the source to the charge-storage layer. Methods of operating NVM cells are disclosed. The NVM cell may be NROM, SONOS, or other oxide-nitride technology NVM cells such as SANOS, MANOS, TANOS.