The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2012

Filed:

Jul. 13, 2009
Applicants:

Maroun Georges Khoury, Burnsville, MN (US);

Hyung-kyu Lee, Edina, MN (US);

Peter Nicholas Manos, Eden Prairie, MN (US);

Chulmin Jung, Eden Prairie, MN (US);

Youngpil Kim, Eden Prairie, MN (US);

Inventors:

Maroun Georges Khoury, Burnsville, MN (US);

Hyung-Kyu Lee, Edina, MN (US);

Peter Nicholas Manos, Eden Prairie, MN (US);

Chulmin Jung, Eden Prairie, MN (US);

YoungPil Kim, Eden Prairie, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/14 (2006.01); G11C 11/15 (2006.01); G11C 7/00 (2006.01); G11C 7/22 (2006.01); G11C 7/12 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device for accessing non-volatile memory cell is provided. In some embodiments, the semiconductor device has a vertical stack of semiconductor layers including a source, a drain, and a well. An application of a drain-source bias voltage to the semiconductor device generates a punchthrough mechanism across the well to initiate a flow of current between the source and the drain.


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