The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 2012

Filed:

Jun. 30, 2010
Applicants:

Nack Bong Choi, Uiwang-si, KR;

Min Joo Kim, Seoul, KR;

Inventors:

Nack Bong Choi, Uiwang-si, KR;

Min Joo Kim, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/136 (2006.01); G02F 1/1333 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are an organic semiconductor structure and a method of manufacturing the same, an organic thin film transistor (OTFT) using the organic semiconductor structure and a method of manufacturing the OTFT, and a display apparatus using the same. The OTFT includes: an oxide layer formed on a base substrate; a source electrode on the oxide layer, wherein the source electrode includes a first source electrode portion and a second source electrode portion; a drain electrode on the oxide layer, wherein the drain electrode includes a first drain electrode portion and a second drain electrode portion; an organic layer pattern having an opening that exposes the first source electrode portion and the first drain electrode portion; an organic semiconductor pattern electrically connected to the first source electrode portion and the first drain electrode portion through the opening, wherein the organic semiconductor pattern has a conductive or an insulating property depending on an applied electric field in a location; a gate insulating layer covering the organic semiconductor pattern; and a gate electrode formed on the gate insulating layer corresponding to the organic semiconductor pattern.


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