The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Jul. 28, 2009
Alexandre M. Bratkovski, Mountain View, CA (US);
Qiangfei Xia, Palo Alto, CA (US);
Jianhua Yang, Palo Alto, CA (US);
Alexandre M. Bratkovski, Mountain View, CA (US);
Qiangfei Xia, Palo Alto, CA (US);
Jianhua Yang, Palo Alto, CA (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A memristor includes a first electrode having a first surface, at least one electrically conductive nanostructure provided on the first surface, in which the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode, a switching material positioned upon said first surface, in which the switching material covers the at least one electrically conductive nanostructure, and a second electrode positioned upon the switching material substantially in line with the at least one electrically conductive nanostructure, in which an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode.