The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Aug. 10, 2011
Yuusuke Sugawara, Yamanashi, JP;
Kazuo Nishi, Yamanashi, JP;
Tatsuya Arao, Kanagawa, JP;
Daiki Yamada, Kanagawa, JP;
Hidekazu Takahashi, Kanagawa, JP;
Naoto Kusumoto, Kanagawa, JP;
Yuusuke Sugawara, Yamanashi, JP;
Kazuo Nishi, Yamanashi, JP;
Tatsuya Arao, Kanagawa, JP;
Daiki Yamada, Kanagawa, JP;
Hidekazu Takahashi, Kanagawa, JP;
Naoto Kusumoto, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A photoelectric conversion device includes a first electrode; and, over the first electrode, photoelectric conversion layer that includes a first semiconductor layer having one conductivity, a second semiconductor layer over the first semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer. An insulating layer is over the third semiconductor layer, and a second electrode is over the insulating layer and is electrically connected to the third semiconductor layer through the insulating layer. The third semiconductor layer and a part of the second semiconductor layer are removed in a region of the photoelectric conversion layer that does not overlap the insulating layer.