The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Sep. 23, 2010
Applicant:
Hiroaki Takasu, Chiba, JP;
Inventor:
Hiroaki Takasu, Chiba, JP;
Assignee:
Seiko Instruments Inc., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a semiconductor device in which the first trench isolation regions is placed between a substrate potential-fixing P-type diffusion region of an ESD protection NMOS transistor and source and drain regions of the ESD protection NMOS transistor, and has a depth greater than a depth of the second trench isolation region that is placed between a substrate potential-fixing P-type diffusion region of an NMOS transistor for internal circuit and source and drain regions of the NMOS transistor for internal circuit.