The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Oct. 16, 2007
Minori Kajimoto, Mie, JP;
Minori Kajimoto, Mie, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes a gate electrode formed on a gate insulating film, a source/drain region formed at each side of the gate electrode and including a first region, a second region and a third region located between the first and second regions, a first silicon oxide film formed on a sidewall of the gate electrode, a second silicon oxide film formed on the third region, and a silicon nitride film formed on an upper surface of the second silicon oxide film. The first silicon oxide film, the second silicon oxide film having the silicon nitride film, and a contact plug are contiguously arranged on the first, third and second regions of the source/drain region. The contact plug extends through the second silicon oxide film and the second nitride file to contact the source/drain region.