The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Mar. 17, 2009
Masaki Shiraishi, Hitachi, JP;
Takayuki Iwasaki, Hitachi, JP;
Nobuyoshi Matsuura, Takasaki, JP;
Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;
Abstract
A semiconductor device in which the self-turn-on phenomenon is prevented that can significantly improve power conversion efficiency. The semiconductor device is a system-in-package for power supply applications in which a high-side switch, a low-side switch, and two drivers are included in a single package. The device includes an auxiliary switch disposed between the gate and source of said low-side switch, and a low-side MOSFETfor the low-side switch and an auxiliary MOSFETfor the auxiliary switch are disposed on the same chip. In this way, the self-turn-on phenomenon can be prevented, allowing the mounting of a low-side MOSFETwith a low threshold voltage and thereby significantly improving power conversion efficiency. The gate of the auxiliary MOSFETis driven by the driver for the high-side MOSFET, thereby eliminating the need for a new drive circuit and realizing the same pin configuration as existing products, which facilitates easy replacement.