The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Feb. 04, 2011
Shih-i Chen, Hsinchu, TW;
Chia-liang Hsu, Hsinchu, TW;
Tzu-chieh Hsu, Hsinchu, TW;
Chun-yi Wu, Hsinchu, TW;
Chien-fu Huang, Hsinchu, TW;
Shih-I Chen, Hsinchu, TW;
Chia-Liang Hsu, Hsinchu, TW;
Tzu-Chieh Hsu, Hsinchu, TW;
Chun-Yi Wu, Hsinchu, TW;
Chien-Fu Huang, Hsinchu, TW;
EPISTAR Corporation, Hsinchu, TW;
Abstract
One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure. The method comprises the steps of providing a substrate; forming a semiconductor system on the substrate; forming a window layer on the semiconductor system, wherein the window layer comprises a semiconductor material different from the semiconductor system; selectively removing the window layer thereby forming a width difference between the window layer and the semiconductor system, and the width difference is greater than 1 micron.