The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Dec. 17, 2009
Applicants:
Sang-wook Kim, Yongin-si, KR;
Sung-ho Park, Yongin-si, KR;
Chang-jung Kim, Yongin-si, KR;
Sun-il Kim, Yongin-si, KR;
Inventors:
Sang-wook Kim, Yongin-si, KR;
Sung-ho Park, Yongin-si, KR;
Chang-jung Kim, Yongin-si, KR;
Sun-il Kim, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are an oxide semiconductor and a thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of indium (In) oxide and hafnium (Hf) and may be a channel material of the thin film transistor.
Kim, Sang-wook. (2012). Oxide semiconductor and thin film transistor including the same (U.S. Patent No. 8207530). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8207530
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile