The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2012
Filed:
Feb. 18, 2010
Eun Kyung Lee, Suwon-si, KR;
Dongmok Whang, Suwon-si, KR;
Byoung Lyong Choi, Seoul, KR;
Byung Sung Kim, Suwon-si, KR;
Eun Kyung Lee, Suwon-si, KR;
Dongmok Whang, Suwon-si, KR;
Byoung Lyong Choi, Seoul, KR;
Byung Sung Kim, Suwon-si, KR;
Abstract
Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires.